UToshiba wethula ama-mosfets amabili wamandla we-80V N-channel

Amadivaysi kuthiwa alungele ukusetshenziswa kwamandla kagesi lapho kusebenza khona ukulahlekelwa okuncane, kubandakanya nokuguqulwa kwe-ac-dc ne-DC-dc ezikhungweni zedatha naseziteshini zokuxhumana kanye nemishini yokushayela imoto. 

Zombili i-TPH2R408QM ne-TPN19008QM zikhombisa ukuncishiswa okuzungeze ama-40% eku-drain-source on-resistance (RDS (ON)) ngokuqhathaniswa nemikhiqizo ehambelana ne-80V ezinqubweni zangaphambili ezinjenge-U-MOSVIII-H, isimangalo sikaToshiba.

I-TPN19008QM inenani le-RDS (ON) le-19mΩ (max.) Ngenkathi inani le-TPH2R408QM liyi-2.43mΩ.

Le nkampani ithi yenze ngcono ukwakhiwa kwamadivayisi, yathuthukisa ukuthengiswa okuphakathi kwe-RDS (ON) nezimpawu zokukhokhwa kwamasango kufinyelela ku-15% kanye nokuhweba okuphakathi kwe-RDS (ON) nemali ekhishwa ngophuma ngama-31%.

Ama-mosfets agcinwe emaphaketheni angaphezulu komhlaba futhi akalwe ngevolumu yomthombo we-80V.

Zisebenza kumazinga okushisa esiteshi aze afike ku-175ºC.

I-TPN19008QM ilinganiselwe umthamo wamanje we-34A futhi ifakwe kwiphakeji engu-3.3 × 3.3mm TSON ngenkathi iTPH2R408QM ilinganiselwe i-120A futhi ifakwe kwiphakheji le-5x6mm SOP.